Manufacturer Part Number
FCI25N60N
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Capable of 600V drain-source voltage
Continuous drain current up to 25A at 25°C
Very low on-resistance of 125mΩ at 12.5A, 10V
Input capacitance of 3352pF at 100V
Supports operating temperatures from -55°C to 150°C
Capable of 216W power dissipation at Tc
Product Advantages
Excellent performance in high-voltage, high-current applications
Low on-resistance for efficient power conversion
Wide temperature range for diverse usage environments
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 125mΩ @ 12.5A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Input Capacitance (Ciss): 3352pF @ 100V
Power Dissipation (Pd): 216W @ Tc
Quality and Safety Features
Compliant with RoHS directives
Robust I2PAK (TO-262) package design
Stringent quality control and testing processes
Compatibility
Suitable for a wide range of high-voltage, high-current power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Lighting ballasts
Industrial automation equipment
Product Lifecycle
This product is an active, widely-used N-Channel MOSFET transistor. Replacements and upgrades are readily available from Fairchild (onsemi) and other manufacturers.
Key Reasons to Choose This Product
Exceptional performance in high-voltage, high-current applications
Efficient power conversion with low on-resistance
Reliable operation across wide temperature range
Robust package and quality assurance