Manufacturer Part Number
FCI25N60N
Manufacturer
onsemi
Introduction
The FCI25N60N is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power electronics applications.
Product Features and Performance
Robust 600V drain-to-source voltage rating
Low on-resistance of 125mΩ at 12.5A and 10V
High continuous drain current of 25A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3352pF at 100V
Maximum power dissipation of 216W at 25°C
Product Advantages
Excellent efficiency and low power losses
Reliable and rugged design for demanding applications
Versatile with a wide range of use cases
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 125mΩ @ 12.5A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Input Capacitance (Ciss): 3352pF @ 100V
Power Dissipation (Pd): 216W @ 25°C
Quality and Safety Features
Robust and reliable design for long-term operation
Complies with industry safety and quality standards
Compatibility
Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and power inverters
Application Areas
Industrial motor drives
Switching power supplies
Power inverters and converters
Electric vehicles and hybrid systems
Product Lifecycle
The FCI25N60N is an active product, with no plans for discontinuation
Replacement or upgraded options may become available in the future as technology evolves
Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and rugged design for demanding applications
Versatile with a wide range of use cases
Compliance with industry safety and quality standards
Availability and support from a reputable manufacturer, onsemi
