Manufacturer Part Number
IPD380P06NMATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in a compact TO-252-3 package, designed for efficient power conversion applications.
Product Features and Performance
High voltage rating up to 60V
Low on-resistance down to 38mΩ
High current capability up to 35A
Fast switching performance
Wide operating temperature range from -55°C to 175°C
Optimized for efficient power conversion
Product Advantages
Compact and space-saving TO-252-3 package
Excellent thermal performance
Robust and reliable design
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 38mΩ @ 35A, 10V
Continuous Drain Current (ID): 35A
Input Capacitance (Ciss): 2500pF @ 30V
Power Dissipation (Pd): 125W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with a wide range of power conversion circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Lighting and LED drivers
Industrial and consumer electronics
Product Lifecycle
Current and actively supported product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High performance and efficiency
Compact and space-saving package
Robust and reliable design
Suitable for a wide range of power conversion applications
Compliance with RoHS3 regulations
IPD400N06NGCypress Semiconductor (Infineon Technologies)
IPD400N06NINENOI