Manufacturer Part Number
IPD35N10S3L26ATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Current Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Product Advantages
Optimized performance with OptiMOS technology
Suitable for high power, high frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Current Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 71W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface Mount Mounting Type
Application Areas
Suitable for high power, high frequency applications
Product Lifecycle
Available as an active product
No information on discontinuation or replacement availability
Key Reasons to Choose This Product
Optimized performance with OptiMOS technology
High voltage rating of 100V
Low on-resistance of 24mOhm
High continuous drain current of 35A
Wide operating temperature range of -55°C to 175°C
IPD400N06NINENOI