Manufacturer Part Number
IPD350N06LGBTMA1
Manufacturer
Infineon Technologies
Introduction
The IPD350N06LGBTMA1 is a single N-Channel MOSFET transistor from the OptiMOS series by Infineon Technologies.
Product Features and Performance
60V drain-to-source voltage rating
Maximum continuous drain current of 29A at 25°C
On-resistance of 35mΩ at 29A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 800pF at 30V
Maximum power dissipation of 68W at 25°C
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance and low on-resistance
Suitable for a variety of power management and control applications
Key Technical Parameters
MOSFET technology
N-Channel type
60V drain-to-source voltage
±20V gate-to-source voltage
35mΩ on-resistance at 29A, 10V
29A continuous drain current at 25°C
Quality and Safety Features
RoHS3 compliant
Packaged in PG-TO252-3 (DPak) surface mount package
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Telecommunications equipment
Automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation known
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for improved efficiency
Excellent thermal performance
Wide operating temperature range
Compact surface mount package
RoHS compliance for broader application compatibility
IPD35CN10NGCypress Semiconductor (Infineon Technologies)