Manufacturer Part Number
IPD320N20N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance n-channel MOSFET transistor
Part of the OptiMOS series
Product Features and Performance
Low on-resistance (RDS(on))
High drain-source voltage (200V)
High continuous drain current (34A)
Wide operating temperature range (-55°C to 175°C)
Low input capacitance (2350pF)
High power dissipation (136W)
Product Advantages
Optimized for high efficiency and low power loss
Suitable for high-power, high-voltage applications
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (VDS): 200V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 32mΩ @ 34A, 10V
Continuous Drain Current (ID): 34A
Input Capacitance (Ciss): 2350pF @ 100V
Power Dissipation (Ptot): 136W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current product offering, no plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and durable design
Optimized for high efficiency and low power loss
Wide operating temperature range
Suitable for a variety of high-power, high-voltage applications
IPD320N20NIR