Manufacturer Part Number
IPD33CN10NGATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD33CN10NGATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
33mΩ Max On-Resistance (Rds(on)) at 27A, 10V
27A Continuous Drain Current (Id) at 25°C
1570pF Max Input Capacitance (Ciss) at 50V
58W Max Power Dissipation at Tc
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact surface-mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 33mΩ @ 27A, 10V
Drain Current (Id): 27A @ 25°C
Input Capacitance (Ciss): 1570pF @ 50V
Power Dissipation (Tc): 58W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and switching circuits
Application Areas
Power supplies
Motor drives
Switching power converters
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacement and upgrade options available from Infineon Technologies
Key Reasons to Choose This Product
High performance and efficiency
Robust design for reliable operation
Compact and easy-to-integrate package
Suitable for a wide range of applications
Backed by Infineon Technologies' industry-leading expertise in power semiconductors
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