IPD30N10S3L34ATMA1 - Infineon Technologies

Manufacturer Part Number

IPD30N10S3L34ATMA1

Manufacturer

Infineon Technologies

Introduction

The IPD30N10S3L34ATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies.

Product Features and Performance

100V drain-to-source voltage rating

30A continuous drain current capability

Low on-resistance of 31mΩ at 10V gate drive

Fast switching with low gate charge of 31nC at 10V

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent power efficiency and thermal performance

Suitable for high-power, high-frequency switching applications

Robust and reliable design for industrial and automotive use

Key Technical Parameters

Drain-to-Source Voltage (Vds): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 31mΩ @ 30A, 10V

Continuous Drain Current (Id): 30A @ 25°C

Input Capacitance (Ciss): 1976pF @ 25V

Power Dissipation (Pd): 57W @ Tc

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability industrial and automotive applications

Compatibility

Compatible with standard TO-252-3 (DPAK) package and surface mount assembly

Application Areas

Switch-mode power supplies

Motor drives

Inverters and converters

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgraded products may be available from Infineon in the future.

Key Reasons to Choose

Excellent power efficiency and thermal performance

Robust and reliable design for demanding applications

Wide operating temperature range and RoHS compliance

Suitable for high-power, high-frequency switching applications

Compatible with standard package and surface mount assembly