Manufacturer Part Number
IPD30N10S3L34ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD30N10S3L34ATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
100V drain-to-source voltage rating
30A continuous drain current capability
Low on-resistance of 31mΩ at 10V gate drive
Fast switching with low gate charge of 31nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-power, high-frequency switching applications
Robust and reliable design for industrial and automotive use
Key Technical Parameters
Drain-to-Source Voltage (Vds): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 31mΩ @ 30A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 1976pF @ 25V
Power Dissipation (Pd): 57W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability industrial and automotive applications
Compatibility
Compatible with standard TO-252-3 (DPAK) package and surface mount assembly
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded products may be available from Infineon in the future.
Key Reasons to Choose
Excellent power efficiency and thermal performance
Robust and reliable design for demanding applications
Wide operating temperature range and RoHS compliance
Suitable for high-power, high-frequency switching applications
Compatible with standard package and surface mount assembly
IPD320N20NIR