Manufacturer Part Number
IPD30N08S2L21ATMA1
Manufacturer
Infineon Technologies
Introduction
High performance N-channel MOSFET transistor
Product Features and Performance
Low on-resistance (RDS(on)) of 20.5 mΩ
High continuous drain current (ID) of 30A
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 1650 pF
High power dissipation of 136W
Product Advantages
Excellent efficiency and low power loss
Compact and rugged package design
Suitable for high-current, high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 75V
Gate-to-Source Voltage (VGS): ±20V
Threshold Voltage (VGS(th)): 2V
Gate Charge (Qg): 72 nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and widely available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low power loss
High current and voltage handling capability
Wide operating temperature range
Compact and rugged package design
Suitable for high-reliability and high-performance applications
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