BSS84PH6327XTSA2 - Infineon Technologies

Manufacturer Part Number

BSS84PH6327XTSA2

Manufacturer

Infineon Technologies

Introduction

High-performance P-Channel MOSFET transistor suitable for a wide range of applications.

Product Features and Performance

Low on-resistance (Rds(on)) of 8 Ohms @ 170 mA, 10 V

Operates over a wide temperature range of -55°C to 150°C

Low input capacitance of 19 pF @ 25 V

Capable of handling up to 170 mA of continuous drain current

Supports gate voltages up to ±20 V

Product Advantages

Excellent power efficiency and thermal management

Reliable and stable performance across a wide temperature range

Compact and space-saving surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 60 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 8 Ohms @ 170 mA, 10 V

Continuous Drain Current (Id): 170 mA @ 25°C

Input Capacitance (Ciss): 19 pF @ 25 V

Power Dissipation (Max): 360 mW

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term use

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Suitable for use in power management, switching, and control circuits

Commonly used in consumer electronics, industrial equipment, and automotive applications

Product Lifecycle

This product is an active and current offering from Infineon Technologies

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Wide operating temperature range for reliable operation

Compact and space-saving surface mount package

Robust and RoHS-compliant design for long-term use

Suitable for a wide range of electronic applications