Manufacturer Part Number
NVJS4151PT1G
Manufacturer
onsemi
Introduction
This product is a P-Channel MOSFET transistor designed for automotive and industrial applications.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 20V
Maximum gate-to-source voltage (Vgs): ±12V
Low on-resistance (Rds(on)): 67mΩ @ 2.9A, 4.5V
Continuous drain current (Id): 3.2A @ 25°C
Input capacitance (Ciss): 850pF @ 10V
Maximum power dissipation: 1.2W
Product Advantages
High reliability and performance for automotive and industrial applications
Low on-resistance for efficient power switching
Wide operating temperature range
Compact surface-mount package options
Key Technical Parameters
MOSFET technology
P-Channel FET type
Threshold voltage (Vgs(th)): 1.2V @ 250μA
Drive voltage range (Rds(on) max, min): 1.5V, 4.5V
Gate charge (Qg): 10nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
This MOSFET is compatible with various industrial and automotive control systems.
Application Areas
Automotive electronics
Motor control
Power management
Industrial equipment
Product Lifecycle
The NVJS4151PT1G is an actively supported product. Replacement or upgrade options may be available, but the current version remains widely used.
Key Reasons to Choose This Product
Reliable performance in harsh automotive and industrial environments
Efficient power switching capabilities with low on-resistance
Compact and versatile surface-mount package options
Compliance with automotive and industrial quality standards