NTH4L040N120SC1 - onsemi

Manufacturer Part Number

NTH4L040N120SC1

Manufacturer

onsemi

Introduction

High-performance silicon carbide (SiC) MOSFET in a TO-247-4L package for use in power electronics applications.

Product Features and Performance

Operates at high voltage up to 1200V

Supports high continuous drain current of 58A at 25°C case temperature

Extremely low on-state resistance of 56mΩ

Fast switching with low gate charge of 106nC

Wide operating temperature range of -55°C to 175°C

Product Advantages

Superior efficiency and power density

Reduced power losses

Simplified system design

Enhanced reliability and robustness

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1200V

Gate-to-Source Voltage (Vgs): +25V/-15V

On-State Resistance (Rds(on)): 56mΩ @ 35A, 20V

Continuous Drain Current (Id): 58A @ 25°C case temperature

Input Capacitance (Ciss): 1762pF @ 800V

Power Dissipation (Tc): 319W

Quality and Safety Features

RoHS3 compliant

Robust TO-247-4L package

Compatibility

Suitable for use in various power electronics applications, such as:

Solar inverters

Motor drives

Uninterruptible power supplies (UPS)

Electric vehicle (EV) charging stations

Industrial power supplies

Application Areas

High-voltage, high-power switching

High-efficiency power conversion

Industrial and renewable energy systems

Product Lifecycle

This product is a current, actively supported model. Replacements and upgrades may become available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent efficiency and power density

Robust and reliable performance

Simplified system design and reduced power losses

Wide operating temperature range for diverse applications

RoHS3 compliance for environmental responsibility