Manufacturer Part Number
NTH4L080N120SC1
Manufacturer
onsemi
Introduction
The NTH4L080N120SC1 is a high-performance silicon carbide (SiC) MOSFET from onsemi, designed for demanding power electronics applications.
Product Features and Performance
1200V breakdown voltage
Low on-resistance of 110mΩ
High continuous drain current of 29A at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching capabilities with low gate charge of 56nC
High power density and efficiency
Product Advantages
Excellent power handling and thermal management
Improved system efficiency and reduced energy consumption
Robust and reliable performance in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): +25V/-15V
On-Resistance (Rds(on)): 110mΩ @ 20A, 20V
Continuous Drain Current (Id): 29A @ 25°C
Input Capacitance (Ciss): 1670pF @ 800V
Power Dissipation (Tc): 170W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to the highest quality standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and renewable energy systems.
Application Areas
Industrial
Automotive
Renewable Energy
Power Conversion
Product Lifecycle
Currently in active production
No known plans for discontinuation
Upgrades and replacements may become available in the future as technology advances
Several Key Reasons to Choose This Product
Excellent power handling and thermal management capabilities
Improved system efficiency and reduced energy consumption
Robust and reliable performance in harsh environments
Compatibility with a wide range of power electronics applications
Manufactured to the highest quality standards