Manufacturer Part Number
FDC642P-F085P
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
Automotive, AEC-Q101 qualified
PowerTrench technology
P-Channel MOSFET
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 65mΩ @ 4A, 4.5V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 630pF @ 10V
Power Dissipation: 1.2W @ 25°C
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 9nC @ 4.5V
Product Advantages
Automotive-grade reliability
High efficiency due to low on-resistance
Compact TSOT-23-6 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 65mΩ @ 4A, 4.5V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 630pF @ 10V
Power Dissipation: 1.2W @ 25°C
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 9nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Surface Mount Package: TSOT-23-6
Application Areas
Automotive electronics
Industrial controls
Power management
Switching circuits
Product Lifecycle
Current product, no discontinuation plans
Several Key Reasons to Choose This Product
Automotive-grade reliability and performance
Low on-resistance for high efficiency
Compact TSOT-23-6 package
Broad range of applications in automotive and industrial electronics
FDC6420MI