Manufacturer Part Number
FDC6420C
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
SuperSOT-6 Manufacturer's packaging
Surface Mount Mounting Type
N and P-Channel Configuration
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
-55°C ~ 150°C (TJ) Operating Temperature
700mW Power Max
20V Drain to Source Voltage (Vdss)
70mOhm @ 3A, 4.5V Rds On (Max) @ Id, Vgs
3A, 2.2A Current Continuous Drain (Id) @ 25°C
324pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
5V @ 250A Vgs(th) (Max) @ Id
6nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
Product Advantages
RoHS3 Compliant
Logic Level Gate FET for easy control
Low on-resistance for efficient switching
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Current Continuous Drain (Id) @ 25°C: 3A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount packaging
Application Areas
Suitable for various power switching and control applications
Product Lifecycle
Current production, no indication of discontinuation
Key Reasons to Choose
RoHS3 compliance for environmental responsibility
Logic Level Gate for easy control
Low on-resistance for efficient switching
Wide operating temperature range for versatility