Manufacturer Part Number
FDC6392S
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
SuperSOT-6 Package
PowerTrench Series
P-Channel MOSFET
Operating Temperature: -55°C to 150°C
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs) Max: ±12V
On-Resistance (Rds On) Max: 150mΩ @ 2.2A, 4.5V
Continuous Drain Current (Id) Max: 2.2A
Input Capacitance (Ciss) Max: 369pF @ 10V
Schottky Diode (Isolated)
Power Dissipation Max: 960mW
Threshold Voltage (Vgs(th)) Max: 1.5V @ 250µA
Drive Voltage: 2.5V (Max Rds On), 4.5V (Min Rds On)
Gate Charge (Qg) Max: 5.2nC @ 4.5V
Product Advantages
Low on-resistance for efficient power conversion
Schottky diode for fast switching
Wide operating temperature range
Key Technical Parameters
MOSFET technology
SuperSOT-6 package
20V Drain-Source Voltage
Up to 2.2A Continuous Drain Current
Quality and Safety Features
ROHS3 compliant
Compatibility
Surface mount package
Application Areas
Power conversion
Switching circuits
Motor control
Battery management
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose
Low on-resistance for efficient operation
Fast switching Schottky diode
Wide operating temperature range
Compact SuperSOT-6 package
Suitable for various power conversion and switching applications