Manufacturer Part Number
FDC638APZ
Manufacturer
onsemi
Introduction
P-channel power MOSFET transistor
Designed for power management and switching applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
Low gate charge for efficient drive
Product Advantages
Excellent thermal performance
High power density
Reliable and durable
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Maximum Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 43mΩ @ 4.5A, 4.5V
Continuous Drain Current (Id): 4.5A
Input Capacitance (Ciss): 1000pF @ 10V
Power Dissipation (Pd): 1.6W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with a wide range of power management and switching circuits
Application Areas
Power supplies
Motor drives
Switching regulators
Battery management systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and power density
High efficiency and fast switching speed
Reliable and durable construction
Automotive-grade quality and safety features
Compatibility with a wide range of power management applications