Manufacturer Part Number
FDC637BNZ
Manufacturer
onsemi
Introduction
The FDC637BNZ is a N-channel MOSFET transistor from onsemi's PowerTrench series, designed for a variety of power management and switching applications.
Product Features and Performance
20V Drain-to-Source Voltage (Vdss)
±12V Gate-to-Source Voltage (Vgs)
24mΩ Maximum On-Resistance (Rds(on)) at 6.2A Drain Current, 4.5V Gate Voltage
2A Continuous Drain Current (Id) at 25°C
895pF Maximum Input Capacitance (Ciss) at 10V Drain-to-Source Voltage
6W Maximum Power Dissipation at 25°C Ambient Temperature
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact SuperSOT-6 package for space-saving designs
Operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 24mΩ @ 6.2A, 4.5V
Continuous Drain Current (Id): 6.2A @ 25°C
Input Capacitance (Ciss): 895pF @ 10V
Power Dissipation: 1.6W @ 25°C
Quality and Safety Features
ROHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and switching circuits
Application Areas
Power supplies
Motor drives
Lighting ballasts
Telecommunications equipment
Industrial automation
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High efficiency and low power dissipation
Robust and reliable operation across a wide temperature range
Compact and space-saving package
Comprehensive product support and documentation from onsemi
FDC634P_NLFairchild (onsemi)