Manufacturer Part Number
FDC637AN
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance (RDS(on)) of 24 mΩ @ 6.2 A, 4.5 V
High continuous drain current (ID) of 6.2 A at 25°C
Low gate charge (Qg) of 16 nC @ 4.5 V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion and control
Reduced power losses
Compact surface-mount package
Suitable for a variety of power management applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20 V
Gate-to-Source Voltage (VGS): ±8 V
Threshold Voltage (VGS(th)): 1.5 V @ 250 μA
Input Capacitance (Ciss): 1125 pF @ 10 V
Power Dissipation (PD): 1.6 W
Quality and Safety Features
RoHS3 compliant
SuperSOT-6 package
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting control
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available, depending on the specific application requirements.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high drain current, and low gate charge
Compact and efficient surface-mount package
Wide operating temperature range for diverse applications
RoHS3 compliance for environmentally-friendly use
Suitable for a variety of power management and control applications
