NVJD4152PT1G - onsemi

Manufacturer Part Number

NVJD4152PT1G

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device a P-channel MOSFET transistor array.

Product Features and Performance

Operates in the automotive temperature range of -55°C to 150°C

Maximum power dissipation of 272mW at 25°C ambient temperature

2 P-channel MOSFET transistors in a single package

Low on-resistance of 260mΩ max at 880mA and 4.5V gate-source voltage

Input capacitance of 155pF max at 20V drain-source voltage

Gate threshold voltage of 1.2V max at 250μA drain current

Gate charge of 2.2nC max at 4.5V gate-source voltage

Product Advantages

Automotive-qualified to AEC-Q101 standard

Compact 6-pin surface mount package options

Suitable for power switching and control applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Continuous Drain Current (Id): 880mA at 25°C

On-Resistance (Rds(on)): 260mΩ max

Input Capacitance (Ciss): 155pF max

Gate Threshold Voltage (Vgs(th)): 1.2V max

Gate Charge (Qg): 2.2nC max

Quality and Safety Features

Automotive-grade qualified to AEC-Q101 standard

Designed and manufactured to high quality standards

Compatibility

Compatible with various power control and switching applications in automotive and industrial electronics

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Product Lifecycle

This is an active product, not nearing discontinuation

Replacement or upgraded products may be available in the future as technology evolves

Key Reasons to Choose This Product

Automotive-qualified performance and reliability

Compact surface mount package options

Low on-resistance and power dissipation for efficient power switching

Wide operating temperature range suitable for harsh environments

Proven MOSFET technology from a reputable manufacturer