19MT050XF - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

19MT050XF

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-performance MOSFET array with 4 N-Channel devices in a half-bridge configuration

Product Features and Performance

Suitable for high-power, high-voltage switching applications

High-voltage capability up to 500V drain-to-source voltage

Low on-resistance down to 220mΩ

High continuous drain current up to 31A

Wide operating temperature range from -40°C to 150°C

Product Advantages

Compact 16-MTP package for efficient power density

Reliable MOSFET technology with proven performance

Suitable for various power conversion and control applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 500V

On-Resistance (Rds(on)): 220mΩ @ 19A, 10V

Continuous Drain Current (Id): 31A @ 25°C

Input Capacitance (Ciss): 7210pF @ 25V

Gate Threshold Voltage (Vgs(th)): 6V @ 250A

Gate Charge (Qg): 160nC @ 10V

Quality and Safety Features

RoHS non-compliant

Chassis mount package for secure installation

Compatibility

Compatible with various power conversion and control applications

Application Areas

Ideal for high-power, high-voltage switching applications such as power supplies, motor drives, and industrial controls

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgrade options may be available from Vishay or other manufacturers

Key Reasons to Choose This Product

High-voltage and high-current capabilities for demanding applications

Low on-resistance for efficient power conversion

Reliable MOSFET technology with proven performance

Compact and secure chassis mount package

Wide operating temperature range for versatile use