SI4500BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4500BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

8-SOIC Package

3W Maximum Power

N and P-Channel, Common Drain Configuration

20V Drain to Source Voltage

20mOhm Maximum Rds On @ 9.1A, 4.5V

MOSFET (Metal Oxide) Technology

6A Continuous Drain Current @ 25°C

Logic Level Gate FET

5V Maximum Vgs(th) @ 250A

17nC Maximum Gate Charge @ 4.5V

Surface Mount Mounting

Product Advantages

High Power Handling Capability

Low On-Resistance

Logic Level Gate

Suitable for a Wide Range of Applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V

Current Continuous Drain (Id) @ 25°C: 6.6A, 3.8A

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Package

Suitable for a Wide Range of Applications

Application Areas

Power Management

Motor Control

Switching Circuits

Industrial Electronics

Product Lifecycle

Active product

Replacements and upgrades available

Key Reasons to Choose This Product

High power handling capability

Low on-resistance

Logic level gate

Suitable for a wide range of applications

RoHS3 compliant

Active product with replacements and upgrades available