SI4497DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4497DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4497DY-T1-GE3 is a P-channel enhancement-mode MOSFET in the TrenchFET series from Vishay/Siliconix.

Product Features and Performance

30V drain-to-source voltage

-55°C to 150°C operating temperature range

3mΩ on-resistance at 20A, 10V

36A continuous drain current at 25°C

9685pF input capacitance at 15V

285nC gate charge at 10V

Product Advantages

Low on-resistance for high efficiency

Wide temperature range for versatile applications

High current handling capability

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 3.3mΩ @ 20A, 10V

Continuous Drain Current (Id): 36A @ 25°C

Input Capacitance (Ciss): 9685pF @ 15V

Gate Charge (Qg): 285nC @ 10V

Quality and Safety Features

RoHS3 compliant

8-SOIC surface mount package

Compatibility

The SI4497DY-T1-GE3 is a direct replacement for a variety of P-channel MOSFET devices.

Application Areas

Switch-mode power supplies

Motor drives

Battery management systems

Industrial and consumer electronics

Product Lifecycle

The SI4497DY-T1-GE3 is an active product with no indication of discontinuation. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

Excellent low on-resistance performance for high efficiency

Wide operating temperature range for versatile applications

High current handling capability

RoHS3 compliance for environmental responsibility

Availability in standard 8-SOIC surface mount package