Manufacturer Part Number
VEC2616-TL-H
Manufacturer
onsemi
Introduction
The VEC2616-TL-H is a dual N-channel and P-channel MOSFET device from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
N and P-Channel MOSFET configuration
Low on-resistance (RDS(on)) of 80 mΩ at 1.5 A, 10 V
Continuous drain current (ID) of 3 A at 25°C
Input capacitance (Ciss) of 505 pF at 20 V
Logic-level gate drive (Vgs(th) of 2.6 V at 1 mA)
Gate charge (Qg) of 10 nC at 10 V
Product Advantages
Efficient power management through low RDS(on)
Suitable for a wide range of power applications
Logic-level gate drive for easy interfacing
Compact 8-pin surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Operating Temperature: -55°C to 150°C
Power Dissipation: 1 W
Quality and Safety Features
RoHS3 compliant
Reliable surface-mount package
Compatibility
Suitable for a variety of power management and switching applications
Application Areas
Power management circuits
Motor control
Switch-mode power supplies
General-purpose power switching
Product Lifecycle
The VEC2616-TL-H is an active product, and there are no immediate plans for discontinuation.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Efficient power handling through low RDS(on)
Versatile N and P-Channel configuration
Logic-level gate drive for easy integration
Compact and reliable surface-mount package
Suitable for a wide range of power management and switching applications
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