Manufacturer Part Number
VEC2415-TL-W
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) MOSFET
Drain to Source Voltage (Vdss): 60V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Current Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Product Advantages
Low on-resistance
High current handling capability
Logic level gate drive
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Current Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount
8-SMD, Flat Lead package
Application Areas
Suitable for various electronic devices and circuits requiring high-performance, low-resistance MOSFETs
Product Lifecycle
Currently available
No indication of discontinuation
Several Key Reasons to Choose This Product
Low on-resistance for efficient power switching
High current handling capability for high-power applications
Logic level gate drive for easy interfacing with control circuitry
Compact surface mount package for space-constrained designs
RoHS3 compliance for use in environmentally-conscious applications