Manufacturer Part Number
FDG6316P
Manufacturer
onsemi
Introduction
Dual P-channel MOSFET with enhanced performance and efficiency
Product Features and Performance
Compact 6-TSSOP (SC-88) package
Low on-resistance for enhanced efficiency
Logic-level gate drive for easy interfacing
Wide operating temperature range of -55°C to 150°C
Optimized for low-power, space-constrained applications
Product Advantages
Efficient power conversion and control
Reduced board space requirements
Ease of integration with logic-level control circuits
Reliable operation in demanding environments
Key Technical Parameters
Drain-to-source voltage (Vdss): 12V
On-resistance (Rds(on)): 270mΩ @ 700mA, 4.5V
Continuous drain current (Id): 700mA
Input capacitance (Ciss): 146pF @ 6V
Gate threshold voltage (Vgs(th)): 1.5V @ 250µA
Gate charge (Qg): 2.4nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Reliable construction and thermal management
Compatibility
Suitable for a wide range of low-power, space-constrained applications
Interchangeable with similar dual P-channel MOSFET devices
Application Areas
Power management and control circuits
Battery-powered devices
LED drivers
Portable electronics
Industrial automation and control systems
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Several Key Reasons to Choose This Product
Efficient power conversion and control with low on-resistance
Compact and space-saving package design
Ease of integration with logic-level control circuits
Reliable operation in a wide range of temperatures and environments
Automotive-grade quality and safety features