Manufacturer Part Number
FDG6318P
Manufacturer
onsemi
Introduction
The FDG6318P is a dual P-channel MOSFET transistor designed for low-power, low-voltage applications.
Product Features and Performance
2 P-Channel MOSFET in a single package
Drain-Source Voltage (Vdss) of 20V
On-Resistance (Rds(on)) of 780mOhm at 500mA, 4.5V
Continuous Drain Current (Id) of 500mA at 25°C
Input Capacitance (Ciss) of 83pF at 10V
Logic Level Gate with Threshold Voltage (Vgs(th)) of 1.5V at 250μA
Gate Charge (Qg) of 1.2nC at 4.5V
Product Advantages
Efficient power management due to low on-resistance
Suitable for low-power, low-voltage applications
Compact SC-88 (SC-70-6) package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 780mOhm @ 500mA, 4.5V
Continuous Drain Current (Id): 500mA @ 25°C
Input Capacitance (Ciss): 83pF @ 10V
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 1.2nC @ 4.5V
Quality and Safety Features
Compliant with RoHS and REACH directives
AEC-Q101 qualified for automotive applications
Compatibility
The FDG6318P is compatible with a wide range of low-power, low-voltage electronic devices and systems.
Application Areas
Portable electronics
Battery-powered devices
Power management circuits
Switch mode power supplies
General-purpose low-power switching applications
Product Lifecycle
The FDG6318P is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Efficient power management due to low on-resistance
Compact and space-saving SC-88 (SC-70-6) package
Wide operating temperature range for diverse applications
Automotive-qualified for reliability in demanding environments
Availability of replacement or upgrade options from the manufacturer
FDG6316P-NLAMI Semiconductor/onsemi