FDG6318P - onsemi

Manufacturer Part Number

FDG6318P

Manufacturer

onsemi

Introduction

The FDG6318P is a dual P-channel MOSFET transistor designed for low-power, low-voltage applications.

Product Features and Performance

2 P-Channel MOSFET in a single package

Drain-Source Voltage (Vdss) of 20V

On-Resistance (Rds(on)) of 780mOhm at 500mA, 4.5V

Continuous Drain Current (Id) of 500mA at 25°C

Input Capacitance (Ciss) of 83pF at 10V

Logic Level Gate with Threshold Voltage (Vgs(th)) of 1.5V at 250μA

Gate Charge (Qg) of 1.2nC at 4.5V

Product Advantages

Efficient power management due to low on-resistance

Suitable for low-power, low-voltage applications

Compact SC-88 (SC-70-6) package for space-constrained designs

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 780mOhm @ 500mA, 4.5V

Continuous Drain Current (Id): 500mA @ 25°C

Input Capacitance (Ciss): 83pF @ 10V

Threshold Voltage (Vgs(th)): 1.5V @ 250μA

Gate Charge (Qg): 1.2nC @ 4.5V

Quality and Safety Features

Compliant with RoHS and REACH directives

AEC-Q101 qualified for automotive applications

Compatibility

The FDG6318P is compatible with a wide range of low-power, low-voltage electronic devices and systems.

Application Areas

Portable electronics

Battery-powered devices

Power management circuits

Switch mode power supplies

General-purpose low-power switching applications

Product Lifecycle

The FDG6318P is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Efficient power management due to low on-resistance

Compact and space-saving SC-88 (SC-70-6) package

Wide operating temperature range for diverse applications

Automotive-qualified for reliability in demanding environments

Availability of replacement or upgrade options from the manufacturer