FDG6321C - onsemi

Manufacturer Part Number

FDG6321C

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

N and P-Channel MOSFET

Drain to Source Voltage (Vdss): 25V

Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V

Current Continuous Drain (Id) @ 25°C: 500mA, 410mA

Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V

FET Feature: Logic Level Gate

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V

Product Advantages

Low Rds(on)

High current capability

Suitable for logic level gate drive

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

Package / Case: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-88 (SC-70-6)

Package: Tape & Reel (TR)

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 300mW

Quality and Safety Features

RoHS: ROHS3 Compliant

Manufacturer's packaging: SC-88 (SC-70-6)

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Low Rds(on) for high efficiency

High current capability for power-hungry applications

Logic level gate drive for easy integration

RoHS compliance for environmental safety

Wide operating temperature range for rugged applications