Manufacturer Part Number
FDG6321C
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
N and P-Channel MOSFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 300mW
Drain to Source Voltage (Vdss): 25V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Current Continuous Drain (Id) @ 25°C: 500mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Product Advantages
Compact Surface Mount Packaging (SC-88 / SC-70-6)
Wide Operating Temperature Range
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)
Package: Bulk
Quality and Safety Features
Compliant with industry standards for quality and safety
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Suitable for use in power management, switching, and control circuits
Product Lifecycle
Current production model, no known plans for discontinuation
Replacements and upgrades may be available from the manufacturer
Several Key Reasons to Choose This Product
Compact and efficient surface mount packaging
Wide operating temperature range for versatile applications
High-performance MOSFET characteristics for power management
Reliable quality and safety features
Compatibility with a wide range of electronic systems
FDG6322C-NLFairchild (onsemi)
FDG6322C MOSAMI Semiconductor/onsemi