Manufacturer Part Number
FDG6317NZ
Manufacturer
onsemi
Introduction
This is a dual N-channel MOSFET transistor from onsemi's PowerTrench series, designed for efficient power switching and control applications.
Product Features and Performance
Rated for up to 20V drain-to-source voltage
Very low on-resistance of 400mOhm at 700mA, 4.5V
Logic-level gate with threshold voltage of 1.5V at 250μA
Low input capacitance of 66.5pF at 10V
Maximum gate charge of 1.1nC at 4.5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power switching with low conduction losses
Suitable for low-voltage, high-current applications
Compact surface-mount package for space-constrained designs
Robust design with wide temperature capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 400mOhm @ 700mA, 4.5V
Continuous Drain Current (Id): 700mA @ 25°C
Input Capacitance (Ciss): 66.5pF @ 10V
Gate Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: SC-88 (SC-70-6)
Compatibility
This MOSFET transistor is compatible with a wide range of low-voltage, high-current applications, including:
Application Areas
Power management circuits
Motor control
LED driving
Battery-powered devices
Industrial controls
Product Lifecycle
The FDG6317NZ is an active product from onsemi, and there are no plans for discontinuation. Replacement or upgrade options may be available, but the specific details would need to be confirmed with the manufacturer.
Key Reasons to Choose This Product
Efficient power switching with low conduction losses
Suitable for low-voltage, high-current applications
Compact surface-mount package for space-constrained designs
Robust design with wide temperature capability (-55°C to 150°C)
RoHS3 compliant for environmental sustainability