FDG6313N - onsemi

Manufacturer Part Number

FDG6313N

Manufacturer

onsemi

Introduction

Dual N-Channel MOSFET transistor array

Product Features and Performance

Operates at high frequency with fast switching

Low on-state resistance for efficient power delivery

Optimized for logic-level gate drive

Suitable for power management and control applications

Product Advantages

Compact SC-88 (SC-70-6) package

Reliable MOSFET technology

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 25V

On-State Resistance (Rds(on)): 450mΩ @ 500mA, 4.5V

Continuous Drain Current (Id): 500mA

Input Capacitance (Ciss): 50pF @ 10V

Gate Threshold Voltage (Vgs(th)): 1.5V @ 250μA

Gate Charge (Qg): 2.3nC @ 4.5V

Quality and Safety Features

Robust MOSFET design for reliable operation

Complies with industry safety and quality standards

Compatibility

Compatible with various power management and control applications

Application Areas

Power management circuits

Logic-level switching

Motor control

Load switching

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Efficient power delivery with low on-state resistance

Optimized for logic-level gate drive

Compact and reliable SC-88 (SC-70-6) package

Wide operating temperature range for diverse applications

Proven onsemi MOSFET technology for quality and performance