FDG6308P - onsemi

Manufacturer Part Number

FDG6308P

Manufacturer

onsemi

Introduction

Discrete semiconductor product

Transistor FET, MOSFET array

Product Features and Performance

2 P-Channel MOSFET devices

Logic level gate

20V drain-source voltage

400mOhm maximum on-resistance

600mA continuous drain current

153pF maximum input capacitance

5nC maximum gate charge

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact surface mount package

Efficient power handling

Suitable for logic-level control

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 400mOhm

Continuous Drain Current (Id): 600mA

Input Capacitance (Ciss): 153pF

Gate Charge (Qg): 2.5nC

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Compatibility

Compatible with logic-level control circuits

Application Areas

Power management

Switching circuits

General-purpose electronics

Product Lifecycle

Current product, no discontinuation information available

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Efficient power handling in a compact surface mount package

Suitable for logic-level control

Wide operating temperature range

RoHS3 compliance for environmental responsibility