Manufacturer Part Number
FDG6306P
Manufacturer
onsemi
Introduction
Dual P-Channel MOSFET Transistor
Product Features and Performance
20V Drain-to-Source Voltage
420mΩ Maximum On-Resistance
600mA Continuous Drain Current
Logic-Level Gate
114pF Maximum Input Capacitance
2nC Maximum Gate Charge
Surface Mount Package
Product Advantages
Compact Surface Mount Package
Excellent Power Handling Capability
Low On-Resistance for Efficient Power Switching
Logic-Level Gate for Easy Interface with Microcontrollers
Key Technical Parameters
Drain-to-Source Voltage: 20V
On-Resistance: 420mΩ
Drain Current: 600mA
Input Capacitance: 114pF
Gate Charge: 2nC
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to 150°C
Compatibility
Suitable for Various Power Switching Applications
Application Areas
Power Supply Circuits
Power Management Circuits
Amplifier Circuits
Motor Control Circuits
Product Lifecycle
This is an active product, not nearing discontinuation.
Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Compact Surface Mount Package
Excellent Power Handling Capability
Low On-Resistance for Efficient Power Switching
Logic-Level Gate for Easy Interface with Microcontrollers
Wide Operating Temperature Range
RoHS3 Compliance for Environmental Friendliness
FDG6303N-NLFairchild (onsemi)
FDG6304AMI Semiconductor/onsemi