Manufacturer Part Number
FDG6304P
Manufacturer
onsemi
Introduction
The FDG6304P is a dual P-channel MOSFET transistor in a small SC-88 (SC-70-6) package, suitable for a wide range of low-power switching and control applications.
Product Features and Performance
Dual P-channel MOSFET design
Low on-resistance of 1.1Ω @ 410mA, 4.5V
Low input capacitance of 62pF @ 10V
Logic-level gate for easy drive
Wide operating temperature range of -55°C to 150°C
Maximum power dissipation of 300mW
Product Advantages
Compact and space-saving design
Low power consumption
Excellent switching performance
Suitable for low-voltage, low-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Continuous Drain Current (Id): 410mA
Gate Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 1.5nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Designed for surface mount applications
Compatible with various low-power electronic circuits and systems
Application Areas
Switching and control circuits
Power management
Low-power consumer electronics
Product Lifecycle
Active product
Replacement or upgrade options available
Key Reasons to Choose This Product
Compact and space-saving design
Low power consumption and excellent switching performance
Suitable for a wide range of low-power applications
Reliable and RoHS3 compliant
FDG6301N_F085AMI Semiconductor/onsemi