FDG6302P - onsemi

Manufacturer Part Number

FDG6302P

Manufacturer

onsemi

Introduction

Dual P-channel MOSFET transistor

Designed for low-power switching and control applications

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 300mW

Drain-to-source voltage (Vdss): 25V

On-resistance (Rds(on)): 10Ω @ 140mA, 4.5V

Input capacitance (Ciss): 12pF @ 10V

Gate threshold voltage (Vgs(th)): 1.5V @ 250μA

Gate charge (Qg): 0.31nC @ 4.5V

Product Advantages

Logic-level gate for easy control

Compact surface-mount packaging (SC-88/SOT-363)

Suitable for low-power switching and control applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Configuration: Dual P-channel

Mounting type: Surface mount

Quality and Safety Features

Designed to meet industrial and automotive requirements

Reliable performance under extreme temperature conditions

Compatibility

Suitable for a wide range of low-power electronic circuit designs

Application Areas

Power management circuits

Logic-level control applications

Battery-powered devices

Portable electronics

Product Lifecycle

Currently available, no known discontinuation plans

Replacement and upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Compact and efficient dual P-channel MOSFET design

Reliable performance across a wide temperature range

Ease of use with logic-level gate control

Suitable for a variety of low-power switching and control applications