Manufacturer Part Number
FDG6302P
Manufacturer
onsemi
Introduction
Dual P-channel MOSFET transistor
Designed for low-power switching and control applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 300mW
Drain-to-source voltage (Vdss): 25V
On-resistance (Rds(on)): 10Ω @ 140mA, 4.5V
Input capacitance (Ciss): 12pF @ 10V
Gate threshold voltage (Vgs(th)): 1.5V @ 250μA
Gate charge (Qg): 0.31nC @ 4.5V
Product Advantages
Logic-level gate for easy control
Compact surface-mount packaging (SC-88/SOT-363)
Suitable for low-power switching and control applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Configuration: Dual P-channel
Mounting type: Surface mount
Quality and Safety Features
Designed to meet industrial and automotive requirements
Reliable performance under extreme temperature conditions
Compatibility
Suitable for a wide range of low-power electronic circuit designs
Application Areas
Power management circuits
Logic-level control applications
Battery-powered devices
Portable electronics
Product Lifecycle
Currently available, no known discontinuation plans
Replacement and upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Compact and efficient dual P-channel MOSFET design
Reliable performance across a wide temperature range
Ease of use with logic-level gate control
Suitable for a variety of low-power switching and control applications
FDG6304AMI Semiconductor/onsemi
FDG6301SK