Manufacturer Part Number
FDG6301N
Manufacturer
onsemi
Introduction
The FDG6301N is a dual N-channel MOSFET transistor designed for use in a variety of low-power applications.
Product Features and Performance
Dual N-channel MOSFET configuration
Low on-resistance (RDS(on) max of 4Ω @ 220mA, 4.5V)
Low input capacitance (Ciss max of 9.5pF @ 10V)
Logic level gate with low gate threshold voltage (Vgs(th) max of 1.5V @ 250μA)
Low gate charge (Qg max of 0.4nC @ 4.5V)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power handling due to low on-resistance
Low power consumption and fast switching
Suitable for space-constrained designs with compact package
Reliable performance over wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (VDS): 25V
Continuous Drain Current (ID): 220mA
Power Dissipation: 300mW
Package: 6-TSSOP, SC-88 (SC-70-6)
Quality and Safety Features
RoHS3 compliant
Halogen-free and lead-free package
Compatibility
This MOSFET transistor is compatible with a wide range of low-power electronic circuits and applications.
Application Areas
Switching circuits
Power management
Portable electronics
Industrial controls
Product Lifecycle
The FDG6301N is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Efficient power handling and low power consumption
Compact and space-saving package
Wide temperature range for versatile applications
Reliable performance and quality features
Compatibility with a variety of low-power electronic circuits