Manufacturer Part Number
FDG332PZ
Manufacturer
onsemi
Introduction
P-channel enhancement-mode PowerTrench MOSFET
Product Features and Performance
Drain-to-source voltage (Vdss) of 20V
Continuous drain current (Id) of 2.6A at 25°C
On-resistance (Rds(on)) of 95mΩ at 2.6A, 4.5V
Input capacitance (Ciss) of 560pF at 10V
Power dissipation of 750mW at 25°C
Gate-to-source voltage (Vgs) range of ±8V
Threshold voltage (Vgs(th)) of 1.5V at 250μA
Gate charge (Qg) of 10.8nC at 4.5V
Product Advantages
PowerTrench technology for low on-resistance
High current capability
Suitable for switching and amplifier applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Continuous drain current (Id): 2.6A at 25°C
On-resistance (Rds(on)): 95mΩ at 2.6A, 4.5V
Input capacitance (Ciss): 560pF at 10V
Gate-to-source voltage (Vgs) range: ±8V
Threshold voltage (Vgs(th)): 1.5V at 250μA
Gate charge (Qg): 10.8nC at 4.5V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount package: SC-88 (SC-70-6)
Application Areas
Switching and amplifier applications in electronic devices
Product Lifecycle
Active product, no discontinuation planned
Several Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current capability for demanding applications
Suitable for a wide range of operating temperatures
Small surface mount package for compact designs
RoHS3 compliance for environmentally-friendly use