Manufacturer Part Number
FDG6303N
Manufacturer
onsemi
Introduction
The FDG6303N is a dual N-channel MOSFET transistor in a compact SC-88 (SC-70-6) package, suitable for a variety of low-power switching and amplification applications.
Product Features and Performance
Dual N-channel MOSFET configuration
Low on-resistance of 450 mΩ at 500 mA, 4.5 V
Low input capacitance of 50 pF at 10 V
Logic-level gate threshold voltage of 1.5 V at 250 μA
Low gate charge of 2.3 nC at 4.5 V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact SC-88 (SC-70-6) package for space-constrained designs
Dual configuration for increased design flexibility
Low on-resistance and input capacitance for efficient switching
Logic-level gate for easy microcontroller compatibility
Wide temperature range for use in diverse applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25 V
Continuous Drain Current (Id) @ 25°C: 500 mA
Power Dissipation (Pd): 300 mW
Quality and Safety Features
RoHS3 compliant for environmentally-friendly manufacturing
Tested and qualified to meet industry standards
Compatibility
Can be used in a variety of low-power switching and amplification applications, such as:
- Power management circuits
- Logic-level control circuits
- LED drivers
- General-purpose switching applications
Application Areas
Consumer electronics
Industrial automation
Automotive electronics
Power management systems
Product Lifecycle
The FDG6303N is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi or other MOSFET manufacturers.
Key Reasons to Choose the FDG6303N
Compact SC-88 (SC-70-6) package for space-constrained designs
Dual N-channel MOSFET configuration for increased design flexibility
Low on-resistance and input capacitance for efficient switching
Logic-level gate threshold for easy microcontroller compatibility
Wide operating temperature range for use in diverse applications
RoHS3 compliance for environmentally-friendly manufacturing