Manufacturer Part Number
NVJD4401NT1G
Manufacturer
onsemi
Introduction
The NVJD4401NT1G is a dual N-channel MOSFET transistor from onsemi, designed for automotive and other general-purpose applications.
Product Features and Performance
2 N-Channel MOSFETs in a single package
Low on-resistance (RDS(on)) of 375 mΩ
High continuous drain current of 630 mA
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 46 pF
Logic level gate with low gate threshold voltage (Vgs(th)) of 1.5 V
Product Advantages
Enhanced efficiency and performance in automotive and general-purpose applications
Compact and space-saving 6-TSSOP/SC-88/SOT-363 package
Compliant with RoHS3 directive
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Continuous Drain Current (Id): 630 mA
Power Dissipation (Ptot): 270 mW
Input Capacitance (Ciss): 46 pF
Gate Charge (Qg): 3 nC
Quality and Safety Features
Automotive-qualified to AEC-Q101 standard
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive and general-purpose electronic applications
Application Areas
Automotive electronics
Power management circuits
Motor control systems
General-purpose switching and control applications
Product Lifecycle
The NVJD4401NT1G is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent performance and efficiency in automotive and general-purpose applications
Compact and space-saving package
Robust design and automotive-grade quality
Availability of replacement or upgrade options
Compliance with industry standards (RoHS3, AEC-Q101)