NVJD5121NT1G - onsemi

Manufacturer Part Number

NVJD5121NT1G

Manufacturer

onsemi

Introduction

N-channel enhancement mode dual MOSFET transistor in a 6-pin TSSOP (SC-88) package.

Product Features and Performance

Automotive-qualified AEC-Q101 device

Dual N-channel MOSFET in a single package

Low on-resistance for efficient power conversion

High-speed switching capabilities

Wide operating temperature range of -55°C to 150°C

Product Advantages

Space-saving dual-channel design

Efficient power conversion performance

Automotive-grade reliability

Wide temperature range suitability

Key Technical Parameters

Drain-to-source voltage (Vdss): 60V

On-resistance (Rds(on)): 1.6Ω @ 500mA, 10V

Continuous drain current (Id): 295mA @ 25°C

Input capacitance (Ciss): 26pF @ 20V

Threshold voltage (Vgs(th)): 2.5V @ 250μA

Gate charge (Qg): 0.9nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

AEC-Q101 automotive qualification

Compatibility

Suitable for surface mount applications

Application Areas

Automotive electronics

Power management circuits

Switching circuits

Motor control

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Dual-channel design for space-efficient power conversion

Low on-resistance for improved efficiency

Automotive-grade reliability and wide temperature range

Suitable for a variety of power management and switching applications