Manufacturer Part Number
NVD5117PLT4G
Manufacturer
onsemi
Introduction
The NVD5117PLT4G is a P-channel power MOSFET transistor from onsemi, designed for automotive and industrial applications.
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Wide operating temperature range of -55°C to 175°C
Low on-resistance of 16mΩ @ 29A, 10V
High continuous drain current of 11A (Ta) and 61A (Tc)
Low input capacitance of 4800pF @ 25V
High power dissipation of 4.1W (Ta) and 118W (Tc)
Product Advantages
Excellent thermal performance and efficiency
Robust design for demanding automotive and industrial environments
Suitable for a wide range of power electronics and motor control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs Max): ±20V
Threshold Voltage (Vgs(th) Max): 2.5V @ 250A
Gate Charge (Qg Max): 85nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount DPAK package (TO-252-3)
Suitable for Tape & Reel (TR) packaging
Application Areas
Automotive electronics
Industrial motor drives and power supplies
Switching power converters
Battery management systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent thermal and electrical performance for demanding applications
Automotive-grade qualification for reliable operation in harsh environments
Compact surface mount package for space-constrained designs
Wide availability and long-term supply through onsemi's global distribution network