Manufacturer Part Number
NVD3055L170T4G
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor suitable for a wide range of power management and switching applications.
Product Features and Performance
High current capability up to 9A continuous drain current
Low on-resistance of 170 mΩ
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 275 pF
Fast switching with a maximum gate charge of 10 nC
High drain-source voltage rating of 60V
Product Advantages
Excellent efficiency and power density
Robust design for reliable operation
Suitable for high-frequency, high-power applications
Compact DPAK surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±15V
On-Resistance (Rds(on)): 170 mΩ
Drain Current (Id): 9A
Input Capacitance (Ciss): 275 pF
Power Dissipation: 1.5W (Ta), 28.5W (Tj)
Quality and Safety Features
Meets industrial-grade quality standards
Robust design for long-term reliability
Overcurrent and overvoltage protection
Compatibility
Compatible with a wide range of power management and switching circuits
Suitable for various applications including DC-DC converters, motor drives, and power supplies
Application Areas
Power management and control
Motor drives
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High-performance and efficient power handling
Robust and reliable design for industrial-grade applications
Compact surface-mount package for space-constrained designs
Wide operating temperature range and compatibility
Supportive technical documentation and customer service from onsemi
NVD5117PLT4GonsemiMOSFET P-CH 60V 11A/61A DPAK