NVD3055L170T4G - onsemi

Manufacturer Part Number

NVD3055L170T4G

Manufacturer

onsemi

Introduction

High-performance N-Channel MOSFET transistor suitable for a wide range of power management and switching applications.

Product Features and Performance

High current capability up to 9A continuous drain current

Low on-resistance of 170 mΩ

Wide operating temperature range of -55°C to 175°C

Low input capacitance of 275 pF

Fast switching with a maximum gate charge of 10 nC

High drain-source voltage rating of 60V

Product Advantages

Excellent efficiency and power density

Robust design for reliable operation

Suitable for high-frequency, high-power applications

Compact DPAK surface-mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs): ±15V

On-Resistance (Rds(on)): 170 mΩ

Drain Current (Id): 9A

Input Capacitance (Ciss): 275 pF

Power Dissipation: 1.5W (Ta), 28.5W (Tj)

Quality and Safety Features

Meets industrial-grade quality standards

Robust design for long-term reliability

Overcurrent and overvoltage protection

Compatibility

Compatible with a wide range of power management and switching circuits

Suitable for various applications including DC-DC converters, motor drives, and power supplies

Application Areas

Power management and control

Motor drives

Switch-mode power supplies

Industrial and consumer electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

High-performance and efficient power handling

Robust and reliable design for industrial-grade applications

Compact surface-mount package for space-constrained designs

Wide operating temperature range and compatibility

Supportive technical documentation and customer service from onsemi