Manufacturer Part Number
NVD2955T4G
Manufacturer
onsemi
Introduction
The NVD2955T4G is a P-channel power MOSFET that is part of onsemi's automotive-grade product portfolio, designed to meet the rigorous requirements of the automotive industry.
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss) of 60V
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 180mΩ at 6A and 10V
Continuous drain current (Id) of 12A at 25°C
Input capacitance (Ciss) of 750pF at 25V
Maximum power dissipation of 55W at 25°C
Product Advantages
Robust and reliable performance for automotive applications
Excellent thermal management due to the DPAK package
Tight parameter control and high quality standards
Key Technical Parameters
MOSFET technology: P-channel
Threshold voltage (Vgs(th)) of 4V at 250A
Gate charge (Qg) of 30nC at 10V
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS 3 compliant
Compatibility
The NVD2955T4G is compatible with various automotive electronic systems and can be used in a wide range of applications.
Application Areas
Automotive electronics
Motor control
Power management
Switching circuits
Product Lifecycle
The NVD2955T4G is an active product in onsemi's portfolio and is not nearing discontinuation. Replacement options and upgrades may be available if needed.
Key Reasons to Choose This Product
Designed for reliable performance in harsh automotive environments
Excellent thermal management and power handling capabilities
Tight parameter control and high-quality standards
AEC-Q101 qualification for automotive applications
RoHS 3 compliance for environmental friendliness