Manufacturer Part Number
NVD5117PLT4G-VF01
Manufacturer
onsemi
Introduction
High-performance P-channel MOSFET transistor suitable for automotive and industrial applications.
Product Features and Performance
P-channel MOSFET structure
60V drain-source voltage rating
Low on-resistance of 16mΩ
High continuous drain current of 61A
Wide operating temperature range of -55°C to 175°C
Low gate charge of 85nC
Product Advantages
Excellent thermal performance and power handling
High reliability and ruggedness for demanding applications
Compact DPAK package enables high-density designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 16mΩ
Continuous Drain Current (Id): 61A
Input Capacitance (Ciss): 4800pF
Power Dissipation: 118W
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive, industrial, and consumer electronics applications.
Application Areas
Motor control
Power management
Automotive electronics
Industrial automation
Product Lifecycle
This product is currently in production and actively supported by the manufacturer. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent power handling and thermal performance
High reliability and ruggedness for demanding applications
Compact and efficient DPAK package
Automotive-grade qualification for critical applications
Wide operating temperature range for versatile use