Manufacturer Part Number
NVD5407NT4G
Manufacturer
onsemi
Introduction
The NVD5407NT4G is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
N-Channel MOSFET
40V Drain-to-Source Voltage
26mOhm Max On-Resistance @ 20A, 10V
6A Continuous Drain Current @ 25°C (Ta), 38A @ 25°C (Tc)
1000pF Max Input Capacitance @ 32V
9W Power Dissipation @ 25°C (Ta), 75W @ 25°C (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
High current capability
Low on-resistance for efficient power conversion
Compact DPAK surface mount package
Automotive-grade AEC-Q101 qualified
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 26mOhm @ 20A, 10V
Continuous Drain Current (Id): 7.6A @ 25°C (Ta), 38A @ 25°C (Tc)
Input Capacitance (Ciss): 1000pF @ 32V
Power Dissipation: 2.9W @ 25°C (Ta), 75W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualification
Compatibility
Surface mount DPAK package
Suitable for use in a wide range of electronic applications
Application Areas
Power management and conversion circuits
Motor control and drives
Automotive electronics
Industrial and consumer electronics
Product Lifecycle
Current production product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High current and power handling capabilities
Low on-resistance for efficient power conversion
Compact and versatile DPAK package
Automotive-grade quality and reliability
Wide operating temperature range
