Manufacturer Part Number
NVD4804NT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
4mΩ Drain-to-Source On-Resistance (Rds(on)) at 30A, 11.5V
5A Continuous Drain Current (Id) at 25°C (Ta)
124A Continuous Drain Current (Id) at 25°C (Tc)
4490pF Input Capacitance (Ciss) at 12V
43W Power Dissipation at 25°C (Ta)
107W Power Dissipation at 25°C (Tc)
5V Gate Threshold Voltage (Vgs(th)) at 250A
Product Advantages
Automotive-grade (AEC-Q101) quality and reliability
Wide operating temperature range (-55°C to 175°C)
Low on-resistance for efficient power conversion
High current handling capability
Key Technical Parameters
N-Channel MOSFET Technology
DPAK (TO-252-3) Package
Tape & Reel (TR) Packaging
Quality and Safety Features
RoHS3 Compliant
Automotive-grade (AEC-Q101) Qualified
Compatibility
Can be used in a variety of automotive and industrial applications
Application Areas
Power management
Motor control
Switching power supplies
Industrial automation
Product Lifecycle
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
Automotive-grade reliability and performance
Low on-resistance for efficient power conversion
High current handling capability
Wide operating temperature range
Compact DPAK package for space-constrained designs
NVD2014/Ai1003NEXTCHIP