NVD3055-150T4G - onsemi

Manufacturer Part Number

NVD3055-150T4G

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor transistor, specifically a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

Product Features and Performance

60V Drain-to-Source Voltage (Vdss)

Maximum 150mΩ On-Resistance (Rds(on)) at 4.5A, 10V Gate-to-Source Voltage (Vgs)

280pF Maximum Input Capacitance (Ciss) at 25V Drain-to-Source Voltage

9A Continuous Drain Current (Id) at 25°C Ambient Temperature

Operating Temperature Range: -55°C to 175°C

Product Advantages

Automotive-grade AEC-Q101 qualified

ROHS3 compliant

Suitable for high-efficiency power conversion applications

Low on-resistance for reduced power losses

Key Technical Parameters

N-Channel MOSFET

60V Drain-to-Source Voltage

±20V Maximum Gate-to-Source Voltage

150mΩ Maximum On-Resistance

9A Continuous Drain Current

280pF Maximum Input Capacitance

8W Maximum Power Dissipation

Quality and Safety Features

AEC-Q101 qualified for automotive applications

ROHS3 compliant for environmental safety

Compatibility

Compatible with various power conversion and control applications

Application Areas

Automotive electronics

Industrial power supplies

Motor drives

Switched-mode power supplies

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Automotive-grade reliability and performance

Low on-resistance for improved efficiency

Wide operating temperature range

Small package size (DPAK) for compact designs

Proven track record in various power electronics applications