Manufacturer Part Number
NVD3055-150T4G
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor transistor, specifically a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
Maximum 150mΩ On-Resistance (Rds(on)) at 4.5A, 10V Gate-to-Source Voltage (Vgs)
280pF Maximum Input Capacitance (Ciss) at 25V Drain-to-Source Voltage
9A Continuous Drain Current (Id) at 25°C Ambient Temperature
Operating Temperature Range: -55°C to 175°C
Product Advantages
Automotive-grade AEC-Q101 qualified
ROHS3 compliant
Suitable for high-efficiency power conversion applications
Low on-resistance for reduced power losses
Key Technical Parameters
N-Channel MOSFET
60V Drain-to-Source Voltage
±20V Maximum Gate-to-Source Voltage
150mΩ Maximum On-Resistance
9A Continuous Drain Current
280pF Maximum Input Capacitance
8W Maximum Power Dissipation
Quality and Safety Features
AEC-Q101 qualified for automotive applications
ROHS3 compliant for environmental safety
Compatibility
Compatible with various power conversion and control applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switched-mode power supplies
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Automotive-grade reliability and performance
Low on-resistance for improved efficiency
Wide operating temperature range
Small package size (DPAK) for compact designs
Proven track record in various power electronics applications
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