Manufacturer Part Number
NTZD3152PT1G
Manufacturer
onsemi
Introduction
Dual P-Channel MOSFET Array
Product Features and Performance
Dual P-Channel MOSFET configuration
Low on-resistance (RDS(on)) of 900 milliohms
High current handling capacity of 430 mA continuous drain current
Low gate charge (Qg) of 2.5 nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Enables compact and efficient circuit designs
Excellent thermal management
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20V
On-Resistance (RDS(on)): 900 milliohms
Continuous Drain Current (ID): 430 mA
Input Capacitance (Ciss): 175 pF
Gate Threshold Voltage (VGS(th)): 1V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with a wide range of electronic applications
Application Areas
Power management circuits
Switching applications
Portable electronics
Industrial controls
Product Lifecycle
Currently available, no plans for discontinuation identified
Key Reasons to Choose This Product
Optimized for compact, efficient circuit designs
Excellent thermal management and reliability
Flexible configuration and performance characteristics
Cost-effective solution for a variety of applications