NTZS3151PT1G - onsemi

Manufacturer Part Number

NTZS3151PT1G

Manufacturer

onsemi

Introduction

P-channel MOSFET transistor

Designed for power management and control applications

Product Features and Performance

Low on-resistance of 150 mΩ

High current capability of 860 mA

Fast switching speed

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 458 pF

Low power dissipation of 170 mW

Product Advantages

Efficient power management and control

Reliable operation in harsh environments

Suitable for space-constrained designs

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate to Source Voltage (Vgs) Max: ±8 V

Drain Current (Id) Continuous @ 25°C: 860 mA

On-Resistance (Rds(on)) Max @ Id, Vgs: 150 mΩ @ 950 mA, 4.5 V

Input Capacitance (Ciss) Max @ Vds: 458 pF @ 16 V

Gate Charge (Qg) Max @ Vgs: 5.6 nC @ 4.5 V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power management and control

Intelligent power switches

Motor control

Battery chargers

Industrial and consumer electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacement and upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Excellent power efficiency and control due to low on-resistance and high current capability

Reliable operation in harsh environments due to wide temperature range

Suitable for space-constrained designs due to small package size

RoHS3 compliance for environmentally-friendly applications