Manufacturer Part Number
NTZD3155CT1G
Manufacturer
onsemi
Introduction
The NTZD3155CT1G is a dual N-channel and P-channel MOSFET from onsemi. It is designed for use in a variety of power management and switching applications.
Product Features and Performance
N and P-Channel MOSFET configuration
Low on-resistance (550 mOhm max)
High current capability (540 mA continuous drain current)
Low input capacitance (150 pF max)
Logic level gate drive (1V threshold voltage max)
Low gate charge (2.5 nC max)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power management through low on-resistance
Versatile dual N/P-channel configuration
Compact surface mount packaging
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 540 mA
On-Resistance (Rds(on)): 550 mOhm max
Input Capacitance (Ciss): 150 pF max
Gate Threshold Voltage (Vgs(th)): 1V max
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering process
Compatibility
Designed for surface mount applications
Compatible with SOT-563 and SOT-666 package options
Application Areas
Power management circuits
Switching applications
LED driver circuits
General-purpose power control
Product Lifecycle
Current production part
No known plans for discontinuation
Replacement options available if needed
Key Reasons to Choose This Product
Efficient power management through low on-resistance
Versatile dual N/P-channel configuration for flexible design
Compact surface mount packaging for space-constrained applications
Wide operating temperature range for robust performance
RoHS3 compliance for environmentally-conscious designs
NTZS3151PAMI Semiconductor/onsemi